Advanced Semiconductor AVD004F RF Power Transistor Datasheet

The AVD004F is an ASI designed NPN Silicon RF Power Transistor with Omnigold Metalization System. This chip has a maximum current of 650 mA, voltage of 32V and power of 18W.


Advanced Semiconductor AVD004F RF Power Transistor Datasheet - cover page
Brand
ASI
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
1
File format
PDF
File size
12 KB
Published
11 June, 2012
Updated
30 September, 2023
MD5 checksum
C3672FE8201CF9BA1D422E00EF4E1B3D

About this manual

The Advanced Semiconductor AVD004F is an NPN silicon RF power transistor designed for high-frequency power amplification applications. It utilizes the proprietary Omnigold™ Metalization System to ensure performance in demanding environments.

Key electrical characteristics include a maximum collector current of 650 mA and a peak dissipation of 18 W. The device operates within a temperature range of -65°C to +200°C and is housed in a .250 2L FLG(B) package.

What's inside

  • Specifications
  • Maximum Ratings
  • Electrical Characteristics
  • Package Dimensions

Specifications

Collector Current (IC)650 mA
Peak Collector-Base Voltage (VCB)32 V
Peak Dissipation (PDISS)18 W
Operating Temperature Range-65°C to +200°C
Package Style.250 2L FLG(B)

Frequently asked questions

What is the maximum power dissipation rating for this transistor?

The maximum power dissipation (PDISS) is rated at 18 W.

What is the operating frequency range for this device?

This transistor operates in a frequency range of 1025 to 1150 MHz.

What is the maximum collector current for this component?

The maximum collector current (IC) limit is 650 mA.

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