This datasheet provides information about the specifications of ASI AVD002P product, including maximum voltage, maximum current, maximum power, and operating temperature range.
This document is a datasheet for the ASI AVD002P, an NPN silicon RF power transistor. The device is designed for RF applications and features the Omnigold™ Metalization System. It is packaged in a .280 4L Pill (A) style package.
The datasheet provides maximum ratings including a collector current of 250 mA and a power dissipation of 10 W at a case temperature below 100 °C. It also lists key electrical characteristics such as breakdown voltages, current gain, and noise figure at specific test conditions.
| Package Style | .280 4L PILL (A) |
|---|---|
| Collector Current (Ic) | 250 mA |
| Power Dissipation (Poiss) | 10 W @ Tc < 100 °C |
| Operating Temperature Range (Ty) | -65 °C to +200 °C |
| Thermal Resistance (Qc) | 10 °C/W |
| Emitter-Base Breakdown Voltage (BVebo) | 3.5 V |
| Collector Cutoff Current (Ices) | 1.0 mA |
| DC Current Gain (hfe) | 30 to 300 |
| Power Gain (Pg) | 9.0 dB |
| Noise Figure (ne) | 35 % |
It is an NPN silicon RF power transistor.
The maximum collector current is 250 mA.
The maximum power dissipation is 10 W when the case temperature is less than 100 °C.