This is a NPN silicon RF power transistor from Advanced Semiconductor. The model number is AVD004P. Its features include Omnigold™ metalization system, maximum current of 650mA, maximum voltage of 32V, and maximum power dissipation of 18W.
This document is a datasheet for the ASI AVD004P, an NPN silicon RF power transistor. It features the Omnigold™ Metalization System and is packaged in a .280 4L Pill (A) style.
The datasheet provides maximum ratings including a collector current (Ic) of 650 mA peak and a power dissipation (Poiss) of 18 W peak. It also lists operating temperatures from -65 °C to +200 °C and includes a table of electrical characteristics such as breakdown voltages and current gains.
| Package Style | .280 4L Pill(A) |
|---|---|
| Collector Current (Ic) | 650 mA PEAK |
| Power Dissipation (Poiss) | 18 W PEAK |
| Collector-Emitter Breakdown Voltage (BVceo) | 45 V |
| Emitter-Base Breakdown Voltage (BVeebo) | 3.5 V |
| Current Gain (hFE) | 30 to 300 |
| Current Gain Bandwidth Product (fT) | 1025 to 1150 MHz |
The ASI AVD004P is an NPN silicon RF power transistor.
The device has a maximum peak collector current of 650 mA and a maximum peak power dissipation of 18 W.
The transistor operates from -65 °C to +200 °C.