AVD015F is a NPN silicon RF power transistor produced by ASI company. Its features are Omnigold metallization system, maximum current of 1.25A, maximum voltage of 50V, maximum power of 50W, and working temperature range of -65℃ to 200℃.
This document is a datasheet for the ASI AVD015F, an NPN silicon RF power transistor. The device utilizes the Omnigold™ Metalization System and is housed in a .250 2L FLG (B) package style. It is designed for RF power applications with a peak collector current of 1.25 A and a maximum collector-emitter voltage of 50 V.
The datasheet provides maximum ratings including peak power dissipation of 50 W and operating temperatures from -65 °C to +200 °C. Key electrical characteristics listed at 25 °C include a minimum collector-emitter breakdown voltage (BVceo) of 65 V and a typical power gain (Gp) of 10.0 dB at 10 MHz.
| Package Style | .250 2L FLG (B) |
|---|---|
| Peak Collector Current | 1.25 A |
| Peak Power Dissipation | 50 W |
| Storage Temperature | -65 °C to +150 °C |
The order code is ASI10556.
The maximum peak power dissipation is 50 W.
The device operates from -65 °C to +200 °C.
The maximum collector current is 1.25 A peak.