The ASI AVD015P is a NPN silicon RF power transistor with the Omnigold™ metallization system, has a maximum current of 1.25A peak, a maximum voltage of 50V, and a maximum power dissipation of 50W peak.
The ASI AVD015P is an NPN silicon RF power transistor designed for use in radio frequency applications. It features the OmniGoid™ Metalization System and is packaged in a .280 4L Pill (A) style package.
Key specifications include a peak collector current of 1.25 A, a peak power dissipation of 50 W, and an operating temperature range from -65 °C to +200 °C.
| Package Style | .280 4L PILL (A) |
|---|---|
| Peak Collector Current | 1.25 A PEAK |
| Peak Power Dissipation | 50 W PEAK |
| Operating Temperature Range | -65 °C to +200 °C |
| Storage Temperature Range | -65 [6 to +150 Te) |
| Thermal Resistance Junction-to-Case | 2.0 °C/W |
It is an NPN silicon RF power transistor.
The maximum peak collector current is 1.25 A.
The maximum peak power dissipation is 50 W.