The ASI 2001 is an NPN silicon RF power transistor designed for general purpose power amplifier applications up to 2300 MHz. It features high output power and efficiency.
The ASI ASI2001 is an NPN silicon RF power transistor designed for general purpose Class C power amplifier applications operating up to 2300 MHz. It features a hermetic microstrip package with the Omnigold™ metalization system and provides a minimum gain of 10 dB at 1.0 W/2,000 MHz.
Key specifications include a maximum collector current (Ic) of 200 mA, a maximum collector-emitter voltage (Vceo) of 35 V, and a power dissipation (Poiss) of 7.0 W at Tc = 25 °C. The device operates within a temperature range of -65 °C to +200 °C.
| Collector Current (Ic) | 200 mA |
|---|---|
| Collector-Emitter Voltage (Vceo) | 35 V |
| Power Dissipation (Poiss) | 7.0 W @ Tc = 25 °C |
| Operating Temperature Range | -65 °C to +200 °C |
| Maximum Operating Frequency | up to 2300 MHz |
The device provides a minimum gain of 10 dB at 1.0 W/2,000 MHz.
It is designed for general purpose Class C power amplifier applications up to 2300 MHz.
The minimum power gain is 10 dB at 1.0 W and 2,000 MHz.
The maximum collector current rating is 200 mA.