The document describes the features and characteristics of the ASI 2003 model, which is an NPN silicon RF power transistor designed for general-purpose power amplifier applications up to 2300 MHz.
The Advanced Semiconductor ASI2003 is an NPN silicon RF power transistor designed for general-purpose Class C power amplifier applications operating up to 2300 MHz. Key features include a minimum power gain of 10 dB at 3 W output power and 2,000 MHz, along with a hermetic microstrip package utilizing the Omnigold metalization system.
| Frequency Range | up to 2300 MHz |
|---|---|
| Power Gain (PG) | 10 dB min. at 3 W/ 2,000 MHz |
| Collector Current (IC) | 600 mA |
| Collector-Emitter Voltage (VCC) | 35 V |
| Power Dissipation (PDISS) | 21.8 W @ TC = 25 OC |
| Operating Junction Temperature (TJ) | -65 OC to +200 OC |
| Package Style | .250 2L FLG |
The ASI2003 is designed for general purpose Class C power amplifier applications up to 2300 MHz.
The minimum power gain is 10 dB at 3 W and 2,000 MHz.
The maximum collector current rating is 600 mA.