This datasheet lists the specifications of IRFF210, including rated voltage, rated current, maximum power dissipation, operating temperature range etc.
The document details the specifications of the IRFF210, a 200V N-Channel HEXFET transistor available in TO-205AF packages. It is rated for repetitive avalanche and dv/dt conditions and complies with MIL-PRF-19500/556 standards.
Key electrical parameters include a maximum continuous drain current of 2.25A at 25°C, an on-state resistance (RDS(on)) of up to 1.725 ohms, and a breakdown voltage of 200V. The datasheet also lists thermal resistance values and provides typical performance curves for output characteristics, transfer characteristics, and switching times.
| Breakdown Voltage (BVDSS) | 200 V |
|---|---|
| Continuous Drain Current (Ip @ Tc=25°C) | 2.25 A |
| Continuous Drain Current (Ip @ Tc=100°C) | 1.50 A |
| Pulsed Drain Current (IDM) | 9.0 A |
| Max Power Dissipation (Pp @ Tc=25°C) | 15 W |
| Gate-to-Source Voltage (Vas) | +/- 20 V |
| Operating Junction Temperature Range | -55 to 150 °C |
The device comes in a through-hole TO-205AF package.
Yes, it is a repetitive avalanche and dv/dt rated HEXFET transistor.
The operating junction temperature range extends up to 150°C.