This document describes the features and characteristics of HEXFET® Power MOSFETs, specifically designed for automotive applications. It has extremely low on-resistance, a 175°C operating temperature, fast switching speed, and improved repetitive avalanche rating. These features make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications.
This document is a datasheet for the International Rectifier IRF3007, an N-channel HEXFET Power MOSFET. It is specifically designed for automotive applications, featuring a 75V breakdown voltage, a continuous drain current of 75A, and an operating temperature range of -55°C to +175°C. The device utilizes advanced processing techniques to achieve ultra-low on-resistance.
| Drain-to-Source Breakdown Voltage | 75 V |
|---|---|
| Operating Junction Temperature | -55 to +175 °C |
| Package Type | TO-220AB |
Yes, the device is Automotive [Q101] Qualified.
The device supports a junction operating temperature of up to 175°C.
The mounting torque is 1.1 N·m (10 lb·in).