The IRF640S/L HEXFET® Power MOSFET is a low-on-resistance, fast-switching, high-voltage, high-temperature third-generation HEXFET® device that can be operated in a dynamic dv/dt rating at 150°C. The device is packaged in the D2Pak, which provides the highest power capability and lowest possible on-resistance of any existing surface mount package.
This document provides technical specifications for the International Rectifier IRF640S/L HEXFET Power MOSFET, available in Surface Mount (D2Pak) and Low-profile through-hole (TO-262) packages. Key features include a 200V breakdown voltage, 18A continuous drain current, and a dynamic dv/dt rating of 5.0 V/ns.
| Continuous Drain Current (Ip) @ Tc = 25°C | 18 A |
|---|
The maximum continuous drain current is 18 A at a case temperature of 25°C.
The maximum continuous drain current is 18 A when the case temperature is 25°C.
The maximum power dissipation is 130 W when the ambient temperature is 25°C.
The maximum operating junction temperature is 175°C.