This datasheet provides the specifications of IRF330 400V N-channel MOSFET.
This document is a datasheet for the International Rectifier IRF330, a Repetitive Avalanche and dv/dt rated HEXFET transistor. The device is an N-channel power MOSFET designed for applications such as switching power supplies, motor controls, inverters, and high energy pulse circuits. It features a TO-204AA (Modified TO-3) through-hole package.
| Continuous Drain Current (Tc=25°C) | 5.5 A |
|---|---|
| Continuous Drain Current (Tc=100°C) | 3.5 A |
| Pulsed Drain Current | 22 A |
| Max. Power Dissipation (Tc=25°C) | 75 W |
| Gate-to-Source Voltage | +20 V |
| Operating Junction Temperature | -55 to 150 °C |
| Drain-to-Source Breakdown Voltage | 400 V |
| Package Type | TO-204AA/AE |
The maximum power dissipation is 75 W at a case temperature of 25°C.
The operating junction temperature range is from -55 to 150 °C.