IRF3000 is a MOSFET power MOSFET for high frequency DC-DC converters. It has low gate-to-drain charge to reduce switching losses. It is fully characterized for capacitance, avalanche voltage and current, simplifying design.
This document provides a comprehensive technical overview of the IRF3000 HEXFET Power MOSFET designed by International Rectifier. It is intended for high-frequency DC-DC converter applications and includes fully characterized capacitance data to simplify design processes.
The datasheet lists absolute maximum ratings, static and dynamic electrical parameters at 25°C, and avalanche characteristics. It also features typical output and transfer characteristic graphs, along with detailed mechanical drawings for the SO-8 package.
| Continuous Drain Current (Ta = 25°C) | 1.6 A |
|---|---|
| Maximum Drain-to-Source Voltage | 300 V |
| Static Drain-to-Source On-Resistance (Typ) | 0.34 Ω |
| Gate Threshold Voltage (Max) | 5 V |
| Power Dissipation (Ta = 25°C) | 25 W |
| Operating Junction Temperature Range | -55 to +150 °C |
The device supports a maximum of 1.6 A when the ambient temperature is 25°C.
The absolute maximum power dissipation rating is 25 W at an ambient temperature of 25°C.
The device operates from -55 to +150°C for the junction and stores between -55 and +150°C.