This data sheet provides the absolute maximum ratings, product summary, brand, model and other information of IRHNA9260.
This document is a datasheet for the International Rectifier IRHNA9260, a radiation-hardened P-channel power MOSFET utilizing RAD-Hard HEXFET technology. The device is characterized for both Total Dose and Single Event Effects (SEE) and is suitable for space applications such as satellite systems. It features a surface mount (SMD-2) ceramic package and offers low on-resistance and low gate charge to reduce power losses in switching applications like DC-to-DC converters and motor control.
| Radiation Level | 100K Rads (Si) |
|---|---|
| Continuous Drain Current | -29A |
| Max. Power Dissipation | 300 W |
| Gate-to-Source Voltage | +20 V |
| Operating Junction Temperature | -55 to 150 °C |
| Static Drain-to-Source On-State Resistance | 0.154 Q |
| Package Type | SMD-2 |
The device is characterized for a radiation level of 100K Rads (Si).
Yes, the JANSR2N7426U is the QPL Part Number for the IRHNA9260.