IRF2907Z IRF2907ZS IRF2907ZL is a power MOSFET designed for automotive applications by International Rectifier. It has extremely low on-resistance, 175°C operating temperature, fast switching speed and improved repetitive avalanche rating. This design is extremely efficient and reliable for use in automotive applications and other applications.
This document is a datasheet for the IRF2907Z, IRF2907ZS, and IRF2907ZL Automotive MOSFET HEXFET Power MOSFET. It is specifically designed for Automotive applications and utilizes advanced process technology to achieve extremely low on-resistance per silicon area. Key features include a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating.
| Drain-to-Source Breakdown Voltage | 75 V |
|---|---|
| Gate Threshold Voltage | 2.0 V to 4.0 V |
| Reverse Recovery Time | 4 ns to 16 ns |
Yes, the document states it is specifically designed for Automotive applications.
The device is rated for a maximum junction operating temperature of 175°C.