IRF2907ZS-7PPbF is a high performance power MOSFET from International Rectifier. Its features include ultra low on-resistance, 175°C operating temperature, fast switching speed, and repetitive avalanche capability. It is suitable for high current high reliability applications.
This document is a technical datasheet for the IRF2907ZS-7PPbF, an N-channel HEXFET Power MOSFET manufactured by International Rectifier. The device utilizes advanced process technology to achieve extremely low on-resistance and world-class current ratings suitable for high-current applications.
| Continuous Drain Current (Silicon Limited) | 180 A |
|---|---|
| Maximum Power Dissipation | 300 W |
| Operating Junction Temperature Range | -55 to+175 °C |
| Drain-to-Source Breakdown Voltage | 75 V |
| Static Drain-to-Source On-Resistance | 3.8 mΩ |
| Gate Threshold Voltage (Typical) | 4.0 V |
| Package Type | D?Pak - 7 Pin Package |
This design is an extremely efficient and reliable device for use in Server & Telecom OR'ing, Automotive and low voltage Motor Drive Applications.
The device supports a 175°C junction operating temperature.