The document describes the features and characteristics of the ASI2005 NPN Silicon RF Power Transistor, designed for general purpose Class C power amplifier applications up to 2300 MHz.
The ASI ASI2005 is an NPN silicon RF power transistor designed for general purpose Class C power amplifier applications operating up to 2300 MHz. It features a hermetic microstrip package with Omnigold™ metalization and offers a minimum gain of 10 dB at 2,000 MHz.
The device has a maximum collector dissipation of 29W at 25°C and operates within a junction temperature range of -65°C to +200°C. Key electrical characteristics include a breakdown voltage (BVceo) of 45V and an operating frequency capability up to 2.0 GHz.
| Operating Frequency Range | up to 2300 MHz |
|---|---|
| Minimum Gain (Pg) | 10 dB min. |
| Maximum Collector Dissipation | 29W @ Te = 25°C |
| Junction Temperature Range | -65 °C to +200 °C |
| Breakdown Voltage BVceo | 45 V |
| Operating Frequency for Gain Spec | 2.0 GHz |
The minimum power gain is 10 dB at 2,000 MHz.
The device operates from -65 °C to +200 °C.