ASI2010 is a NPN Silicon RF Power Transistor designed for General Purpose Class C Power Amplifier Applications up to 2300MHz. Features: PG = 5 dB min. at 10 W/ 2,000 MHz; Hermetic Microstrip Package; Omnigold™ Metalization System.
The ASI2010 is an NPN silicon RF power transistor designed for general-purpose Class C power amplifier applications operating up to 2300 MHz. Key features include a minimum gain of 5 dB at 10 W and 2,000 MHz, along with a hermetic microstrip package utilizing the Omnigoid™ Metalization System.
The document provides maximum ratings for parameters such as collector current (1.5A), voltage (35 V), and power dissipation (35 W). It also lists electrical characteristics including breakdown voltages, gain, capacitance, and noise figure under specific test conditions at 25°C.
| Frequency Range | up to 2300 MHz |
|---|---|
| Gain (Pg) | 5 dB min. at 10 W/ 2,000 MHz |
| Operating Temperature Range | -65 °C to +200 °C |
It is designed for general purpose Class C power amplifier applications up to 2300 MHz.
The device provides a minimum of 5 dB gain under these conditions.
The transistor operates from -65 °C to +200 °C.