ASI ASI2223-4 NPN Silicon RF Power Transistor Datasheet

The ASI 2223-4 is an NPN Silicon RF Power Transistor designed with input matching network and Omnigold™ metalization system.


ASI ASI2223-4 NPN Silicon RF Power Transistor Datasheet - cover page
Brand
ASI
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
1
File format
PDF
File size
13 KB
Published
11 June, 2012
Updated
29 September, 2023
MD5 checksum
8300A5B161CAC4DFD0EA4C89013423D9

About this manual

The ASI ASI2223-4 is an NPN silicon RF power transistor designed with an input matching network and an Omnigold™ Metalization System. It is packaged in a .400 2NL FLG style package.

Key specifications include a maximum collector current (Ic) of 0.75 A, a breakdown voltage (Vceo) of 26 V, and a power dissipation rating of 15.9 W at 25°C. The device operates within a temperature range of -65 °C to +200 °C.

What's inside

  • Description
  • Features
  • Maximum Ratings
  • Characteristics

Specifications

Collector Current (Ic)0.75 A

Frequently asked questions

What is the maximum continuous collector current for this transistor?

The maximum continuous collector current (Ic) is rated at 0.75 A.

What is the maximum power dissipation of the ASI2223-4?

The device can dissipate a maximum of 15.9 W when the case temperature is 25°C.

What is the operating frequency range for this component?

The specified power gain characteristics are valid for a frequency range of 22-23 GHz.

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