ASI 2223-12 is a NPN Silicon RF Power Transistor with a maximum current of 1.5 A, maximum voltage of 25 V and maximum power dissipation of 33.0 W.
The document is a technical datasheet for the ASI 2223-12 (also referenced as ASI223-12), an NPN silicon RF power transistor designed by Advanced Semiconductor. It includes detailed electrical characteristics, maximum ratings, and mechanical dimensions.
Key features highlighted in the text include an integrated Input Matching Network and the Omnigold™ Metalization System. The device is specified for operation with a collector current of 1.5A and a power dissipation of 33.0W at temperatures up to 70°C.
| Collector Current (IC) | 1.5 A |
|---|---|
| Power Dissipation (PDISS) | 33.0 W @ TC ≤ 70 OC |
| Operating Temperature Range | -65 OC to +200 OC |
| Package Style | .310 2L FLG |
| Order Code | ASI10532 |
The maximum collector current (IC) is 1.5 A.
The power dissipation (PDISS) is 33.0 W when the case temperature is less than or equal to 70°C.
The junction temperature (TJ) ranges from -65°C to +200°C.