The document describes the features and characteristics of the ASI 2223-20 NPN Silicon RF Power Transistor. The transistor features an input matching network and Omnigold™ metallization system.
The document is a technical datasheet for the ASI2223-20, an NPN silicon RF power transistor manufactured by Advanced Semiconductor Inc. The device features an input matching network and Omnigold™ metalization system, optimized for high-frequency radio frequency applications.
Key specifications include a maximum collector current of 3.0A, a voltage rating of 25V, and a power dissipation of 55W at temperatures up to 50°C. The transistor operates within a temperature range of -65°C to +200°C and delivers 20W output power with 40dB gain in the 2.2–2.3 GHz frequency band.
| Collector Current (IC) | 3.0 A |
|---|---|
| Collector-Emitter Voltage (VCC) | 25 V |
| Power Dissipation (PDISS) | 55 W @ TC ≤ 50 OC |
| Operating Temperature Range | -65 OC to +200 OC |
| Frequency Range | 2.2 – 2.3 GHz |
| Output Power (POUT) | 20 W |
| Gain | 40 dB |
The order code listed in the document is ASI10533.
Yes, the features list includes an Input Matching Network.