This document is a specification sheet for the ASI2302 NPN Silicon RF Power Transistor. The transistor is designed for general purpose Class C power amplifier applications up to 3000 MHz. It features a minimum PG of 9.5 dB at 2 W / 2300 MHz. The transistor is packaged in a hermetic microstrip package and utilizes the Omnigold™ metalization system.
The ASI2302 is an NPN silicon RF power transistor designed for general-purpose Class C power amplifier applications operating up to 3000 MHz. Key features include a minimum gain (Pg) of 9.5 dB at 2 W and 2300 MHz, packaged in a hermetic microstrip package with the Omnigold™ Metalization System.
The document details maximum ratings such as collector current (Ic) of 300 mA and operating temperature range from -65 °C to +200 °C. It also lists electrical characteristics including breakdown voltages, cutoff frequency, and power dissipation at various conditions.
| Application | General purpose Class C Power Amplifier Applications up to 3000 MHz |
|---|---|
| Gain (Pg) | 9.5 dB min. |
| Package Style | .250 2L FLG |
| Collector Current (Ic) | 300 mA |
| Collector-Emitter Voltage (Vceo) | 26 V |
| Power Dissipation (Ptot) | 6.0 W @Tc< 50°C |
| Operating Temperature Range | -65 °C to +200 °C |
It is designed for general purpose Class C power amplifier applications up to 3000 MHz.
The maximum collector current (Ic) is rated at 300 mA.