ASI2304 is a NPN silicon RF power transistor designed for general purpose Class C power amplifier applications. It features high gain, low noise, low power consumption and low on-resistance, making it ideal for use in high frequency and high power amplifiers.
The document is a technical data sheet for the ASI2304, an NPN silicon RF power transistor manufactured by Advanced Semiconductor. It is specifically designed for general-purpose Class C power amplifier applications operating at frequencies up to 3000 MHz.
Key features highlighted include a minimum gain of 9.5 dB at 4 W and 2300 MHz, a hermetic microstrip package, and an Omnigold metalization system. The device supports a maximum collector current of 600 mA and operates within a temperature range of -65°C to +200°C.
| Operating Frequency | up to 3000 MHz |
|---|---|
| Minimum Gain | 9.5 dB at 4 W / 2300 MHz |
| Maximum Collector Current (IC) | 600 mA |
| Power Dissipation (PDISS) | 11.5 W @ TC ≤ 50°C |
| Operating Temperature Range | -65°C to +200°C |
| Thermal Resistance (θJC) | 13°C/W |
The minimum gain is 9.5 dB at 4 W and 2300 MHz.
It uses a hermetic microstrip package.