The document describes the features and characteristics of the ASI3000 NPN Silicon RF Power Transistor, which is widely used in general purpose Class C power amplifier applications up to 3500 MHz. Features include a minimum power gain of 7 dB, hermetic microstrip package, and Omnigold metallization system.
The ASI3000 is an NPN silicon RF power transistor designed for general-purpose Class C power amplifier applications operating up to 3500 MHz. It features a gain of at least 7 dB at 0.5 W and 3,000 MHz and utilizes a hermetic microstrip package with an Omnigold metalization system.
The document lists maximum ratings including a collector-emitter voltage of 30 V and a power dissipation of 2.5 W at 25°C. It also provides detailed electrical characteristics such as breakdown voltages, current gains, and capacitance values measured at 25°C.
| Frequency Range | up to 3500 MHz |
|---|---|
| Gain (P,g) | 7 dB minimum at 0.5 W / 3,000 MHz |
| Collector-Emitter Voltage (Vee) | 30 V |
| Power Dissipation (Poiss) | 2.5 W @ Tc = 25°C |
| Operating Temperature Range | -65 °C to +200 °C |
| Collector-Base Breakdown Voltage (BVcbo) | 250 mA (at Vcb = 28 V) |
| Collector-Emitter Breakdown Voltage (BVceo) | 50 V |
The ASI3000 is designed for applications up to 3500 MHz.
The minimum gain is 7 dB at 0.5 W and 3,000 MHz.
The maximum power dissipation is 2.5 W at a case temperature of 25°C.