This document is the datasheet of ASAT30. It introduces the features and characteristics of the product, including BVCEO, BVCER, RBE, BVEBO, ICES, hFE, PGE, ηηC, IC, VCB, VCE, PDISS, TJ, TSTG, θθJC, PACKAGE STYLE, ORDER CODE, etc.
The ASI ASAT30 is an NPN silicon RF power transistor designed with the Omnigold™ Metalization System. It operates within a junction temperature range of -65 °C to +200 °C.
Key specifications include a collector current (Ic) of 10A, a maximum voltage between emitter and substrate (Ves) of 60 V, and a power dissipation (Poiss) of 140 W at Tc = 25 °C. The device is housed in a .250 2L FLG(A) package.
| Voltage Emitter-Substrate (Ves) | 60 V |
|---|---|
| Power Dissipation (Poiss) | 140 W @ Tc = 25 °C |
| Junction Temperature Range | -65 °C to +200 °C |
| Storage Temperature (Tstg) | -65 °C to +150 °C |
| Thermal Resistance Junction-Case (RthJC) | 3.5 °C/W |
The ASI ASAT30 is designed for use as an NPN silicon RF power transistor.
The maximum power dissipation is 140 W at a case temperature of 25 °C.