This document is the product specification sheet for ASAT25, an NPN Silicon RF Power Transistor by Advanced Semiconductor, Inc. It describes the features and characteristics of the product.
The ASI ASAT25 is an NPN silicon RF power transistor designed with the Omnigold™ Metalization System. It features a .250 2L Flg(A) package style and is manufactured by Advanced Semiconductor, Inc.
Key specifications include a maximum collector current (Ic) of 26A, a collector-emitter breakdown voltage (Vceo) of 12V, and an operating temperature range from -65°C to +200°C. The device supports a power dissipation of 25W with a thermal resistance of 3.5°C/W.
| Package Style | .250 2L Flg(A) |
|---|---|
| Collector-Emitter Voltage (Vceo) | 12V |
| Operating Temperature Range | -65 °C to +200 °C |
| Storage Temperature Range | -65 °C to +150 °C |
| Thermal Resistance (RθJC) | 3.5 °C/W |
| Collector-Emitter Breakdown Voltage (BVceo) | 12 V |
| Emitter-Base Breakdown Voltage (BVebo) | 3.0 V |
It is an NPN silicon RF power transistor.
The maximum collector-emitter voltage is 12V.