This document describes the features and characteristics of the ASAT20 model, including maximum ratings, current, voltage, and power parameters.
The ASI ASAT20 is an NPN silicon RF power transistor designed with the Omnigold™ Metalization System. It is packaged in a .250 2L FLG(A) style and features an order code of ASI10519.
The document lists maximum ratings including a collector current of 3.0A and a power dissipation of 37.2W at 25°C. Key electrical characteristics include a collector-emitter breakdown voltage of 45V and a power gain of 82 dB at 1.65 GHz.
| Collector-Emitter Voltage (Vceo) | 45 V |
|---|---|
| Collector-Base Voltage (Vcbo) | 15V |
| Emitter-Base Voltage (Vebo) | 3.0 V |
| Power Dissipation (Pd) | 37.2W @ Te = 25°C |
| Operating Temperature Range | -65 °C to +200 °C |
| Storage Temperature Range | -65 °C to +150 °C |
| Thermal Resistance (Rthjc) | 4.0 °C/W |
| Frequency (f) | 1.65 GHz |
The maximum power dissipation is 37.2W when the temperature is 25°C.
The device operates from -65°C to +200°C.