This document describes the features and characteristics of the ASI ALR015 NPN Silicon RF Power Transistor.
This document is a datasheet for the ASI ALRO15, an NPN silicon RF power transistor designed for applications requiring input matching networks. The device features an Omnigoid™ Metalization System and is housed in a .310 2L FLG package style.
The datasheet provides maximum ratings including a collector current of 1.8A, a collector-emitter voltage of 32V, and a power dissipation of 37.5W at 25°C. It also lists electrical characteristics such as breakdown voltages, current gains, and power gains at specific frequencies.
| Power Dissipation (Po) | 37.5 W @ To = 25°C |
|---|---|
| Operating Temperature Range (Tt) | -65 °C to +250 °C |
| Storage Temperature Range (Tst) | -65 °C to +200 °C |
| Collector-Emitter Breakdown Voltage (BVceo) | 48 V |
| Collector-Base Breakdown Voltage (BVcbo) | 48 V |
| Emitter-Base Breakdown Voltage (BVebo) | 3.5 V |
| Collector Cutoff Current (Ices) | 1.5 mA |
| DC Current Gain (hfe) | 30 to 300 |
| Power Gain (Po) | 8.5 dB |
The ASI ALRO15 is an NPN silicon RF power transistor designed for use in input matching networks.
The device has a maximum collector current of 1.8A and a maximum collector-emitter voltage of 32V.
The maximum power dissipation is 37.5 W when the temperature is 25°C.