The ASI ALR030 is a NPN silicon RF power transistor with a maximum current of 2.75A, a maximum voltage of 32V, and a maximum power dissipation of 63W.
The ASI ALRO30 is an NPN silicon RF power transistor designed for applications requiring input matching networks. It utilizes the Omnigoid Metalization System and is packaged in a .310 2L Flg style package.
The device is rated for a maximum collector current of 2.75 A and a maximum power dissipation of 63 W at 25°C. Operating temperature ranges from -65°C to +250°C, with storage temperatures from -65°C to +200°C.
| Collector Current (Ic) | 2.75 A |
|---|---|
| Collector-Emitter Voltage (Vceo) | 32 V |
| Power Dissipation (Pd) | 63 W @ To = 25°C |
| Operating Temperature (Tj) | -65 °C to +250 °C |
| Storage Temperature (Tsta) | -65 °C to +200 °C |
| Collector-Emitter Breakdown Voltage (BVceo) | 55 V |
| Collector-Base Breakdown Voltage (BVcbo) | 55 V |
| Emitter-Base Breakdown Voltage (BVebo) | 3.5 V |
| Power Gain (Pe) | 7° |
The maximum collector current rating is 2.75 A.