This document describes the features and characteristics of the NPN Silicon RF Power Transistor ALR060 produced by Advanced Semiconductor, Inc.
The document is a technical specification sheet for the Advanced Semiconductor ALR060, an NPN Silicon RF Power Transistor. It details the device's electrical characteristics and maximum ratings suitable for RF power amplifier scenarios.
Key features highlighted include an integrated Input Matching Network and the proprietary Omnigold™ Metalization System. The datasheet lists specific performance metrics such as a typical power output of 60 W at frequencies between 1.2 to 1.4 GHz.
| Collector Current (IC) | 5.0 A |
|---|---|
| Collector-Emitter Voltage (VCC) | 32 V |
| Power Dissipation (PDISS) | 107 W @ TC = 25 OC |
| Operating Temperature Range | -65 OC to +250 OC |
| Package Style | .310 2L FLG |
Yes, the device is designed with an Input Matching Network as one of its key features.
The maximum collector current (IC) is rated at 5.0 A.
The typical power output (POUT) is 60 W when operating between 1.2 and 1.4 GHz.
The device can be stored between -65 OC and +200 OC.