ALR100 is a NPN silicon RF power transistor produced by ASI company. It features high output power, low noise and high efficiency.
This document is a datasheet for the ASI ALR100, an NPN silicon RF power transistor designed with an input matching network and Omnigoid™ Metalization System. The device operates within a temperature range of -65 °C to +250 °C (Tj) and features a 400-2L FLG package style.
Key specifications include a maximum collector current (Ic) of 13.5A, a collector-emitter voltage (Voc) of 32V, and a power dissipation (Poiss) of 270 W at Tc = 25 °C. The datasheet provides typical electrical characteristics such as a breakdown voltage BVceo of 65 V and a current gain hFE ranging from 15 to no maximum specified under test conditions.
| Collector Current (Ic) | 13.5A |
|---|---|
| Collector-Emitter Voltage (Voc) | 32V |
| Power Dissipation (Poiss) | 270 W @ Tc = 25 °C |
| Junction Temperature Range (Tj) | -65 °C to +250 °C |
| Storage Temperature Range (Tstg) | -65 °C to +200 °C |
| Thermal Resistance (θJC) | 0.55 °C/W |
The typical hFE ranges from 15 to no maximum specified under test conditions.
The collector-emitter breakdown voltage with base open is typically 65 V.