This document describes the features and characteristics of the ASI ALR200, including input matching network and Omnigold™ metalization system.
This document is a datasheet for the ASI ALR200, an NPN silicon RF power transistor. It specifies that the device utilizes the Omnigold™ Metalization System and is designed for applications requiring input matching networks. The component is housed in a .400 2L FLG (A) package style.
The datasheet provides maximum ratings including a collector-emitter voltage of 40V, a collector current of 16A, and a power dissipation of 575W at 25°C. Operating temperature ranges from -65°C to +250°C. Key electrical characteristics listed include a minimum collector-emitter breakdown voltage of 70V and a typical power gain of 7.0 dB.
| Package Style | .400 2L FLG (A) |
|---|---|
| Collector-Emitter Voltage (Max) | 40 V |
| Power Dissipation (Max) | 575 W @ Tc = 25 °C |
| Operating Temperature Range | -65°C to +250°C |
| Collector-Emitter Breakdown Voltage (Min) | 70 V |
| Power Gain (Typical) | 7.0 dB |
The device is rated for operation from -65°C to +250°C.
The maximum power dissipation is 575 W when the case temperature is 25°C.
The typical gain is 7.0 dB.