ALR325 is a silicon RF power transistor produced by Advanced Semiconductor Inc. The maximum output current is 18.75A, the maximum output power is 730W, the working temperature range is -65℃ to 250℃, and the package form is 2L FLG(A).
The ASI ALR325 is an NPN silicon RF power transistor designed for RF power applications. It features an input matching network and an Omnigold™ metalization system. Key maximum ratings include a collector current of 18.75 A, a collector-emitter voltage of 55 V, and a power dissipation of 730 W at TC = 25°C.
| Collector Current (IC) | 18.75 A |
|---|---|
| Collector-Emitter Voltage (VCC) | 55 V |
| Power Dissipation (PDISS) | 730 W @ TC = 25°C |
| Operating Temperature (TJ) | -65°C to +250°C |
| Storage Temperature (TSTG) | -65°C to +200°C |
| Thermal Resistance (θJC) | 0.10°C/W |
| Package Style | .400 2L FLG(A) |
| Order Code | ASI10516 |
The maximum power dissipation is 730 W when the case temperature is 25 degrees Celsius.
The maximum collector current is 18.75 A.
The device operates at a frequency between 1.2 and 1.4 GHz.