The document describes the characteristics and features of the ASI ASAT10 NPN Silicon RF Power Transistor. It features an input matching network and Omnigold™ metallization system.
The ASI ASAT10 is an NPN silicon RF power transistor designed for use with a .250 2L Flg(A) package style. It features the Omnigold™ Metalization System and is manufactured by Advanced Semiconductor, Inc.
The document provides maximum ratings including a collector current of 23 A and a maximum junction temperature of +200 °C. Key electrical characteristics are listed for test conditions at 25 °C, covering breakdown voltages and capacitance values.
| Package Style | .250 2L Flg(A) |
|---|---|
| Metalization System | Omnigold™ |
| Collector Current (Ic) | 23 A |
| Emitter-Base Voltage (Vebo) | 3.5 V |
| Power Dissipation (Pd) | 29W @ Ta = 25°C |
| Operating Junction Temperature (Tj) | -65 °C to +200 °C |
| Storage Temperature (Tsra) | -65 to +150 °C |
| Input Capacitance (Ciss) | 7.0 pF |
The ASI ASAT10 is an NPN silicon RF power transistor.
The transistor dissipates a maximum of 29 W when the temperature is 25 C.