The ASI ASAT15 is a NPN silicon RF power transistor produced by ASI company. It features Omnigold metalization system, maximum current 3.0A, maximum voltage 45V, and maximum power 37.2W.
The ASI ASAT15 is an NPN silicon RF power transistor designed for high-frequency communication applications. It utilizes an Omnigold™ Metalization System to ensure stable operating characteristics and high frequency performance. The device is housed in a .250 2L FLG(A) package.
| Collector-Base Voltage (VCBO) | 45 V |
|---|---|
| Collector-Emitter Voltage (VCEO) | 15 V |
| Emitter-Base Voltage (VEBO) | 3.0 V |
| Power Dissipation (PDISS) | 37.2 W |
| Operating Junction Temperature (TJ) | -65°C to +200°C |
| Package Style | .250 2L FLG(A) |
The maximum power dissipation (PDISS) is rated at 37.2 W.
The typical hFE value is 150 when VCE is 5.0 V and IC is 1.0 A.