The document describes the features and characteristics of the ASI BLV33F model, which is designed for operation in Band III TV transposers and transmitter amplifiers from 170 to 230 MHz.
The ASI BLV33F is an NPN silicon RF power transistor specifically designed for operation in Band III TV transposers and transmitter amplifiers within the frequency range of 170 to 230 MHz. The device features gold metalization with an internal input matching network and utilizes the Omnigold™ Metalization System.
Key specifications include a maximum collector current (Ic) of 10A, a power dissipation rating of 140W at a case temperature of 25°C, and an operating junction temperature range from -65°C to +200°C. The transistor is housed in a .500 6L FLG package style.
| Frequency Range | 170 to 230 MHz |
|---|---|
| Power Dissipation (Poiss) | 140 W @ Tc = 25°C |
| Operating Junction Temperature (Tj) | -65 °C to +200 °C |
| Storage Temperature (Tstg) | -65 °C to +150 °C |
| Collector-Emitter Breakdown Voltage (BVceo) | 35 V |
| Package Style | .500 6L FLG |
The transistor is designed for operation in Band III TV transposers and transmitter amplifiers from 170 to 230 MHz.
The maximum power dissipation is 140 W when the case temperature is 25°C.
The device operates from -65 °C to +200 °C.