MRF427 is a NPN silicon RF power transistor designed by ASI company. It is suitable for high voltage applications up to 30 MHz. The device has the following features: PG = 18 dB min. at 25 W/30 MHz, IMD3 = -34 dBc max. at 25 W(PEP), Omnigold™ Metalization System
The ASI MRF427 is an NPN silicon RF power transistor designed for high voltage applications operating up to 30 MHz. Key features include a minimum Power Gain (PG) of 18 dB at 25 W/30 MHz and a maximum third-order intermodulation distortion (IMD3) of -34 dBc at 25 W PEP output power.
| Collector-Base Voltage (BVCBO) | 110 V |
|---|---|
| Collector-Emitter Voltage (BVCEO) | 65 V |
| Emitter-Base Voltage (BVEBO) | 4.0 V |
| Collector Current (IC) | 6.0 A |
| Power Dissipation (PDISS) | 80 W @ TC = 25 °C |
| Operating Temperature Range (TJ) | -65 O C to +200 °C |
| Package Style | .500 4L FLG |
The device is designed for high voltage applications up to 30 MHz.
At 25 W/30 MHz, the Power Gain is at least 18 dB with a typical value of 20 dB.
The IMD3 is -34 dBc max. at 25 W(PEP).