The ASI BAM120 is a NPN Silicon RF Power Transistor designed to operate in 150 MHz VHF Power Amplifier Applications.
The ASI BAM120 is an NPN silicon RF power transistor designed to operate in a collector modulated VHF Power Amplifier application up to 150 MHz. It features the Omnigold™ Metalization System and is available with a .500 4L FLG package style.
Key electrical characteristics include a maximum collector-emitter voltage (Vces) of 60 V, a power dissipation (Poiss) of 140 W at Tc = 25°C, and an operating temperature range from -65 °C to +200 °C. The device provides typical gain (Pg) of 9.0 dB and efficiency (No) of 65% typ. at 120 W/150 MHz.
| Product Type | NPN Silicon RF Power Transistor |
|---|---|
| Package Style | .500 4L FLG |
| Collector-Emitter Voltage (Vces) | 60 V |
| Power Dissipation (Poiss) | 140 W @ Tc = 25°C |
| Operating Temperature Range | -65 °C to +200 °C |
| Gain (Pg) | 9.0 dB typ. |
| Efficiency (No) | 65 % typ. |
The maximum power dissipation is 140 W when the temperature is 25°C.