ASI1010 is an NPN silicon RF power transistor from Advanced Semiconductor company. It is designed for general purpose Class C power amplifier applications up to 1500MHz. The product features PG = 12 dB min. at 10 W/ 1,000 MHz and is packaged in a Hermetic Microstrip Package with Omnigold™ Metalization System.
The ASI1010 is an NPN silicon RF power transistor designed for general purpose Class C power amplifier applications up to 1500 MHz. It features a hermetic microstrip package and an Omnigold™ metalization system.
| Frequency Range | up to 1500 MHz |
|---|---|
| Collector-Emitter Voltage | 35 V |
| Power Dissipation | 29 W |
| Gain | 12 dB min. |
| Package Style | .250 2L FLG |
The ASI1010 is designed for general purpose Class C power amplifier applications up to 1500 MHz.
The device provides a minimum power gain of 12 dB at 10 W and 1,000 MHz.
The maximum power dissipation is 29 W when the case temperature is 25 degrees Celsius.