This datasheet is about ASI1005's specifications, including rated values, test conditions, minimum, typical, maximum, unit, etc.
The ASI1005 is an NPN silicon RF power transistor designed for general purpose Class C power amplifier applications up to 1500 MHz. It features a hermetic microstrip package and an Omnigold™ metalization system.
| Frequency | up to 1500 MHz |
|---|---|
| Collector-Base Voltage | 45 V |
| Collector-Emitter Voltage | 45 V |
| Collector-Base Leakage Current | 1.0 mA |
| Collector Current | 600 mA |
| Collector-Emitter Voltage | 35 V |
| Power Dissipation | 18.75 W |
| Operating Temperature | -65 OC to +200 OC |
| Thermal Resistance | 15 OC/W |
It is designed for general purpose Class C power amplifier applications up to 1500 MHz.
The minimum gain is 12 dB at 5 W and 1,000 MHz.
The maximum power dissipation is 18.75 W when the case temperature is 50 degrees Celsius or lower.