The ASI1002 is a NPN Silicon RF power transistor designed for general purpose Class C power amplifier applications up to 1500MHz.
The document describes the ASI1002, an NPN silicon RF power transistor designed for general purpose Class C power amplifier applications up to 1500 MHz. Key features include a hermetic microstrip package and an Omnigold™ metalization system.
Technical specifications are provided for various electrical characteristics such as BVCBO, BVEBO, ICBO, hFE, Cob, and PG (power gain). The document also lists maximum ratings including collector current (IC), supply voltage (VCC), power dissipation (PDISS), and operating temperatures.
| Frequency Range | up to 1500 MHz |
|---|---|
| Power Gain (PG) | 12 dB min at 2 W / 1,000 MHz |
| Maximum Collector Current (IC) | 200 mA |
| Power Dissipation (PDISS) | 6.25W @ TC ≤ 75 OC |
The ASI1002 is designed for general purpose Class C power amplifier applications up to 1500 MHz.
The maximum power dissipation is 6.25W when the case temperature is 75 OC or lower.
The minimum power gain is 12 dB at 2 W and 1,000 MHz.