Advanced Semiconductor ASI1001 NPN Silicon RF Power Transistor Datasheet

ASI1001 is a NPN silicon RF power transistor designed for general purpose class C power amplifier applications up to 1500MHz.

Brand: ASI
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 1
File format: PDF
File size: 13 KB
Published: 11 June, 2012
Updated: 30 September, 2023
MD5 checksum: 1EA6D2CF6CA841D5CF84CE90DCA8218C
PDF: Advanced Semiconductor ASI1001 NPN Silicon RF Power Transistor Datasheet PDF

About this manual

The ASI1001 is an NPN silicon RF power transistor designed for general purpose Class C power amplifier applications up to 1500 MHz. It features a hermetic microstrip package and an Omnigold™ metalization system.

What's inside

Description
Features
Electrical Characteristics
Maximum Ratings
Package Style
Dimensions

Specifications

Frequency Range	up to 1500 MHz
Collector-Base Breakdown Voltage	45 V
Collector-Emitter Breakdown Voltage	45 V
Collector-Base Capacitance	3.2 pF
Maximum Collector Current	200 mA
Operating Junction Temperature	-65 OC to +200 OC
Package Style	.250 2L FLG

Frequently asked questions

What is the Advanced Semiconductor ASI1001 designed for?

The ASI1001 is an NPN silicon RF power transistor designed for general purpose Class C power amplifier applications up to 1500 MHz.

What is the maximum collector current rating?

The maximum collector current (IC) rating is 200 mA.

What are the minimum and maximum operating temperatures for the junction?

The junction temperature (TJ) ranges from -65 OC to +200 OC.

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