The document describes the features and performance parameters of the ASI UMIL20 NPN silicon RF power transistor, which is suitable for Class A, AB, and C amplifier applications in the military communication frequency range of 225 to 400 MHz.
The ASI UMIL20 is an NPN silicon RF power transistor packaged in a .280 4L stud style. It is specifically designed as a direct replacement for the MRF323 device.
This component is intended for use in Class A, AB, and C amplifier applications within the 225 to 400 MHz military communications band. Key features include an Omnigold™ Metalization System and typical power gain (Pg) of 12 dB at 400 MHz.
| Collector-Emitter Voltage (Vceo) | 65 V |
|---|---|
| Power Dissipation (Poiss) | 35 W @ Tc = 25°C |
| Operating Temperature Range (Tj) | -65 °C to +200 °C |
| Storage Temperature Range (Tstg) | 65 °C to +150 °C |
| Thermal Resistance (84c) | 5.0 °C/w |
The device is designed for military communications in the 225 to 400 MHz band.
The ASI UMIL20 is an NPN silicon RF power transistor designed for Class A, AB, and C amplifier applications.
The maximum power dissipation is 35 W at a case temperature of 25°C.