This datasheet provides the characteristics, specifications, maximum ratings, and package dimensions for the MLN1037S NPN Silicon RF Power Transistor.
This document is a datasheet for the ASI MLN1037S, an NPN silicon RF power transistor designed with the Omnigold Metalization System. It provides key specifications including collector current up to 10A and operating temperatures from -65°C to +200°C.
The datasheet lists maximum ratings such as a collector-emitter voltage of 60V and power dissipation of 140W at 25°C. Electrical characteristics include breakdown voltages, current gains, and capacitance values under specific test conditions.
| Collector-Emitter Voltage (Vces) | 60 V |
|---|---|
| Collector-Base Voltage (Vcbo) | 35V |
| Power Dissipation (Pois) | 140 W @ Tc = 25 °C |
| Operating Temperature Range (Tj) | -65 °C to +200 °C |
| Storage Temperature Range (Tstg) | -65 °C to +150 °C |
| Thermal Resistance Junction-to-Case (RthJC) | 5.5 °C/W |
The maximum power dissipation is 140 W at a case temperature of 25 °C.
The operating temperature range is from -65 °C to +200 °C.