This document is a technical datasheet for the Toshiba 1SS396, a silicon epitaxial Schottky barrier type diode designed for low voltage and high-speed switching applications. The device features a small SC-59 package and operates within an ambient temperature range of -40 to +100 °C.
Key electrical characteristics include a maximum peak reverse voltage (VRM) of 45 V, a maximum average forward current (Io) of 100 mA, and a typical forward voltage drop of 0.36 V at 10 mA. The datasheet provides detailed maximum ratings, electrical characteristics tables, and graphical curves illustrating performance under various conditions.
| Package Type | SC-59 |
|---|---|
| Maximum Peak Reverse Voltage | 45 V |
| Reverse Voltage | 40 V |
| Maximum Peak Forward Current | 300 mA |
| Average Forward Current | 100 mA |
| Surge Current (10ms) | 1 A |
| Power Dissipation | 150 mW |
| Junction Temperature | 125 °C |
| Storage Temperature Range | -65~125 Cc |
| Operation Temperature Range | -40~100 °C |
The maximum peak reverse voltage rating is 45 V.
The typical forward voltage drop is 0.60 V at 100 mA.
The maximum total capacitance is 25 pF.