This document is a technical datasheet for the Toshiba 1SS397, a silicon epitaxial planar diode designed for high voltage and high speed switching applications. The device features a small SC-70 package with a maximum peak reverse voltage of 420V.
| Maximum (Peak) Reverse Voltage | 420 V |
|---|---|
| Reverse Voltage | 400 V |
| Maximum (Peak) Forward Current | 300 mA |
| Average Forward Current | 100 mA |
| Surge Current (10ms) | 2 A |
| Power Dissipation | 100 mw |
| Junction Temperature | 125 °C |
| Storage Temperature Range | -55~125 °c |
The device has a maximum peak reverse voltage of 420 V and a reverse voltage rating of 400 V.
The maximum total capacitance is 5.0 pF when measured at a reverse voltage of 0 V and a frequency of 1 MHz.