The TC55V8512J/FT is a high-speed static random access memory (SRAM) with 4,194,304 bits, organized as 524,288 words by 8 bits. It is fabricated using CMOS technology and advanced circuit techniques to provide high-speed operation. It is well suited for cache memory applications where high-speed access and high-speed storage are required.
The document details the specifications for the TC55V8512J/FT-12 and TC55V8512J/FT-15 models of CMOS Static Random Access Memory (SRAM). These devices are organized as 524,288 words by 8 bits and operate from a single 3.3 V power supply. They feature fast access times of 12 ns or 15 ns maximum and are available in 36-pin SOJ and 44-pin TSOP packages.
| Memory Organization | 524,288 words x 8 bits |
|---|---|
| Power Supply Voltage | 3.3 V +0.3 V |
| Access Time (Model -12) | 12 ns max |
| Access Time (Model -15) | 15 ns max |
| Operating Temperature Range | -10 to 85 °C |
The maximum access time for the TC55V8512J/FT-12 model is 12 ns.
Yes, all inputs and outputs are directly LVTTL compatible.