This document is a technical datasheet for the Toshiba 1SS394, a silicon epitaxial Schottky barrier type diode designed for high-speed switching applications. The device features a small package (SC-59) and low forward voltage characteristics.
The datasheet provides maximum ratings including a peak reverse voltage of 15V and an average forward current of 100mA. It also details electrical characteristics such as forward voltage drop, reverse current, and total capacitance under specific test conditions.
| Peak Reverse Voltage (VRM) | 15 V |
|---|---|
| Average Forward Current (Io) | 100 mA |
| Surge Current (Irsm) | 1 A |
| Power Dissipation (P) | 150 mW |
| Junction Temperature (Tj) | 125 °C |
The typical forward voltage (VF(2)) is 0.28V when the current is 5mA.
The device can operate within a temperature range of -40°C to 100°C.