This document is a technical datasheet for the Toshiba 1SS395, a silicon epitaxial Schottky barrier type diode designed for high-speed switching applications. The device features a low forward voltage drop of typically 0.23V at an IF of 5mA and is housed in a SC-70 package.
| Maximum (Peak) Reverse Voltage | 15 V |
|---|---|
| Average Forward Current | 100 mA |
| Surge Current (10ms) | 1 A |
| Power Dissipation | 100 mW |
| Forward Voltage (Typical) | 0.23 V |
The maximum peak reverse voltage rating is 15 V.
The typical forward voltage drop is 0.23 V when the current is 5 mA.
The maximum junction temperature is 125 °C.