This document is a technical datasheet for the Toshiba 1SS391, an epitaxial Schottky barrier type silicon diode designed for low voltage and high speed switching applications. The device features a small SC-61 package and operates with a maximum peak reverse voltage of 15V.
| Maximum (Peak) Reverse Voltage | 15 V |
|---|---|
| Reverse Voltage | 10 V |
| Average Forward Current | 100 mA |
| Power Dissipation | 150 mW |
| Junction Temperature | 125 C |
It is a silicon epitaxial Schottky barrier type diode designed for low voltage and high speed switching.
The maximum peak reverse voltage (VRM) is rated at 15 V.
The device has an average forward current (Io) rating of 100 mA.