This document is a technical datasheet for the Toshiba 1SS392, a silicon epitaxial Schottky barrier type diode designed for low voltage and high-speed switching applications. The device features a small SC-59 package and operates within specific temperature ranges defined in the specifications.
The datasheet provides detailed maximum ratings such as peak reverse voltage of 45V and average forward current of 100mA. It also lists electrical characteristics including typical forward voltage drops at various currents, reverse leakage current limits, and total capacitance values.
| Peak Reverse Voltage (VRM) | 45 V |
|---|---|
| Average Forward Current (Io) | 100 mA |
| Surge Current (10ms) (Irom) | 1 A |
| Power Dissipation (P) | 150 mW |
| Junction Temperature (Tj) | 125 °C |
| Operating Temperature Range (Topr) | -40~100 °C |
| Package Type | SC-59 |
The maximum peak reverse voltage is rated at 45 V.
The typical forward voltage is 0.54 V at a test current of 100 mA.
The device operates within a temperature range of -40 to 100 °C.